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A 36V JFET-input bipolar operational amplifier is presented with a maximum off set drift of 1μV/°C over a temperature range of -40 to 125°C, which represents a 3x improvement on the state-of-the-art. This is achieved with a drift-compensating circuit incorporated in the input stage that relies on a wafer-level 2-tem perature laser-trimming method. The opamp has a GBW of 11MHz, a flat-band noise of 5.1nV/vTHz, a slew-rate of 20V/μs, a -126dB (0.00005%) total harmon ic distortion plus noise (THD+N) ratio, and a quiescent current of 1.8mA. This combination of high slew rate and good noise-to-power ratio is accomplished through the use of a linearized class-AB boosting circuit in the input stage.
Date of Conference: 20-24 Feb. 2011