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Power semiconductor devices are important microelectronics components determined with the efficiency, size, and cost of electronic systems for energy application. Exact design of the modern element base of microelectronics provides reliable operation of the system. Results of the technology design of the IGBT structure are presented and discussed. Obtained data are needed for following calculations of the IGBT transistor electrical features. Presented results were obtained by means of Silvaco program package intended for technology/devise simulation.