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Simulation of electron transport in magnetic tunnel junctions using the drift-diffusion model

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3 Author(s)
Comesana, E. ; Dept. de Electron. e Comput., Univ. de Santiago de Compostela, Santiago de Compostela, Spain ; Garcia-Loureiro, A. ; Aldegunde, M.

In this work we present preliminary results of the simulations done for a (Zn, Co)O/ZnO/(Zn, Co)O MTJ to obtain the I-V spin dependent characteristics and the TMR using an in-house developed simulator. The Poisson equation and two electron continuity equations, one for each spin, are solved self-consistently to take into account separately the contribution of each spin to the total current. In this preliminary work, the results are compared with previous experimental results obtained for a range of low temperatures between 4 K and 100 K.

Published in:

Electron Devices (CDE), 2011 Spanish Conference on

Date of Conference:

8-11 Feb. 2011