Simulation of electron transport in magnetic tunnel junctions using the drift-diffusion model

In this work we present preliminary results of the simulations done for a (Zn, Co)O/ZnO/(Zn, Co)O MTJ to obtain the I-V spin dependent characteristics and the TMR using an in-house developed simulator. The Poisson equation and two electron continuity equations, one for each spin, are solved self-consistently to take into account separately the contribution of each spin to the total current. In this preliminary work, the results are compared with previous experimental results obtained for a range of low temperatures between 4 K and 100 K.