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Electrical Characteristics of Germanium \hbox {n}^{+}/ \hbox {p} Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

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5 Author(s)
Thareja, G. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Cheng, S.-L. ; Kamins, T. ; Saraswat, K.
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Highly activated n-type dopant is essential for n+ /p germanium diodes which will be in use for source/drain regions in Ge n-MOSFETs as geometry scaling proceeds. Rapid thermal annealing of coimplanted P and Sb in Ge has provided n-type dopant activation beyond 1 × 1020 cm-3. However, there are limited reports on the electrical characteristics of these junctions. This letter has investigated the temperature-dependent diode I-V characteristics and contact resistance of metal-n+ Ge contacts. Well-behaved n+ /p Ge diodes (Ion/Ioff >; 105 and η <; 1.2) and significantly reduced contact resistance (ρc ~ 8 × 10-7 Ω · cm2) have been demonstrated.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )

Date of Publication:

May 2011

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