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Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer

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4 Author(s)
Binh-Minh Nguyen ; Center for Quantum Devices, Northwestern Univ., Evanston, IL, USA ; Guanxi Chen ; Minh-Anh Hoang ; Razeghi, M.

We report the molecular beam epitaxial growth and characterization of high-performance Type-II superlattice photodiodes on a 3-in GaSb substrate for long-wavelength infrared detection. A 7.3-μm-thick device structure shows excellent structural homogeneity as demonstrated by atomic force microscopy and X-ray diffraction characterization. Optical and electrical measurements of the photodiodes reveal not only the uniformity of the Type-II superlattice material but also of the fabrication process. Across the wafer, at 77 K, photodiodes with a 50% cut-off wavelength of 11 μm exhibit more than 45% quantum efficiency and a dark current density of 1.0 × 10-4 A/cm2 at 50 mV, giving a specific detectivity of 6 × 1011 cm Hz1/2/W.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 5 )

Date of Publication:

May 2011

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