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Multicolor {\rm ITO}/{\rm SiO}_{x}/{\rm p}\hbox {-}{\rm Si}/{\rm Al} Light Emitting Diodes With Improved Emission Efficiency by Small Si Quantum Dots

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3 Author(s)
Bo-Han Lai ; Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan ; Chih-Hsien Cheng ; Gong-Ru Lin

In this paper, multicolor ITO/SiOx/p-Si/Al light emitting diodes (LEDs) made by Si quantum dot (Si-QD) embedded Si-rich SiOx grown by detuning the radio frequency (RF) plasma power under the plasma-enhanced chemical vapor deposition system are presented. With the Si-QD size shrinkage obtained by increasing the RF plasma powers from 30 to 70 W, the turn-on voltage of red, green, and blue ITO/SiOx/p-Si/Al LEDs is found to increase from 70 to 99 V, with the maximum electroluminescent power increasing from 9 to 423 nW.

Published in:

IEEE Journal of Quantum Electronics  (Volume:47 ,  Issue: 5 )