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25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)

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7 Author(s)
Hokazono, A. ; Semicond. Co., Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan ; Itokawa, H. ; Kusunoki, N. ; Mizushima, Ichiro
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Steep channel profiles of scaled transistors are a promising approach for advancing transistor generation in bulk complementary metal-oxide-semiconductor (MOS). In this paper, a carbon-doped Si (Si:C) layer under an undoped Si layer is proposed to form steep p-type channel profiles in n-channel MOS field-effect transistors (nMOSFETs) due to extremely low diffusivity of boron and indium in Si:C layers. This structure with low channel impurity improves mobility and suppresses threshold voltage (VTH) variation. Both items are essential for aggressively scaled MOSFETs with a gate length less than 25 nm. We demonstrated well-controlled, high-performance, and low VTH variability nMOSFETs with a Si:C-Si epitaxial channel structure.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 5 )