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High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

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7 Author(s)
Lang, J.R. ; Department of Materials, University of California, Santa Barbara, California 93106, USA ; Neufeld, C.J. ; Hurni, C.A. ; Cruz, S.C.
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High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH3-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 13 )

Date of Publication:

Mar 2011

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