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Vertical conduction behavior through atomic graphene device under transverse electric field

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3 Author(s)
Lee, Yun-Hi ; Department of Physics, National Research Laboratory for Nano Device Physics, Korea University, Seoul 136-713, Republic of Korea ; Kim, Yoon-Joong ; Lee, J.-H.

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Many studies have characterized disordered graphene layers as variable-range hopping and activated hopping conduction for a graphene structure with planar left and right electrodes. We report the electrical transport measurements of atomic-thick-graphene with top and bottom Ti/Pt electrodes. In the vertical device of metal-graphene-metal under a transverse electric field, the current at the low field or high temperature was explained by bulk-limited conduction, so called Ohmic current. On the other hand, space-charge-limited-conduction dominated at low temperatures or under high fields. The estimated trap concentration for the high field or low temperature conduction was approximately 3.7×1017 cm-3, and from a cessation of the power law dependence in the J-V characteristics it was determined that the onset of failure breakdown of the vertical GL structure began after dissipating power of 2.7×1012 Wm-3.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 13 )