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Intersubband transitions at atmospheric window in AlxGa1-xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer

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14 Author(s)
Huang, C.C. ; State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People''s Republic of China ; Xu, F.J. ; Yan, X.D. ; Song, J.
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Defects and strain control in AlxGa1-xN/GaN multiple quantum wells (MQWs) for intersubband transitions (ISBTs) at atmospheric window grown on GaN/sapphire templates by metal-organic chemical vapor deposition have been investigated adopting strain modulation technique using AlN/GaN superlattices (SLs) interlayer. It is found that cracking in the MQWs can be effectively avoided adopting AlN/GaN SLs interlayer. It is demonstrated that AlN/GaN SLs interlayer acts as a flexible layer and relieves most of the tensile strain through buried microcracks in AlN/GaN SLs interlayer. The intersubband absorptions at 3.6–4.1 μm wavelength region have been observed on the crack-free AlxGa1-xN/GaN MQWs. Our results open up prospects to realize crack-free and high quality AlxGa1-xN/GaN MQWs on GaN/sapphire templates for ISBTs devices at 3–5 μm atmospheric window.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 13 )

Date of Publication:

Mar 2011

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