By Topic

Intersubband transitions at atmospheric window in AlxGa1-xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
14 Author(s)
Huang, C.C. ; State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People''s Republic of China ; Xu, F.J. ; Yan, X.D. ; Song, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Defects and strain control in AlxGa1-xN/GaN multiple quantum wells (MQWs) for intersubband transitions (ISBTs) at atmospheric window grown on GaN/sapphire templates by metal-organic chemical vapor deposition have been investigated adopting strain modulation technique using AlN/GaN superlattices (SLs) interlayer. It is found that cracking in the MQWs can be effectively avoided adopting AlN/GaN SLs interlayer. It is demonstrated that AlN/GaN SLs interlayer acts as a flexible layer and relieves most of the tensile strain through buried microcracks in AlN/GaN SLs interlayer. The intersubband absorptions at 3.6–4.1 μm wavelength region have been observed on the crack-free AlxGa1-xN/GaN MQWs. Our results open up prospects to realize crack-free and high quality AlxGa1-xN/GaN MQWs on GaN/sapphire templates for ISBTs devices at 3–5 μm atmospheric window.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 13 )