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Total dose radiation hard 0.5 μm SOI CMOS transistors and 256 K SRAMs

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2 Author(s)
S. T. Liu ; Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA ; W. C. Jenkins

The first 2 Mrad(SiO2) total dose hard 0.5 μm CMOS SOI 256 K SRAM fabricated in SIMOX has been demonstrated. The address access time varied from 15 ns at 3.6 V to 19 ns at 3.0 V. The address access time was nearly independent of temperature from -55°C to 125°C and independent of radiation to 2×106 rad(SiO 2) for a given Vdd. The standby current was 0.5 mA at 2×106 rad(SiO2) which was much better than the specified 1.5 mA

Published in:

Radiation Effects Data Workshop, 1996., IEEE

Date of Conference:

19 Jul 1996