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A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

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8 Author(s)
Bazigos, A. ; Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland ; Krummenacher, F. ; Sallese, J.-M. ; Bucher, M.
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This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just as that of a low-voltage inner MOS transistor. It exploits the charge-sheet approximation and performs linearization between the charge in the drift region and the surface potential. The drift region model combined with the standard charge-sheet MOS model for the low-voltage part adds up to a complete HV-MOSFET model, which is verified against technology computer-aided design simulations and measurements of HV-MOS transistors. The comparisons demonstrate its accurate physics foundations and underline that this novel approach to the modeling of the drift region of the HV-MOSFET is promising.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 6 )