By Topic

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Fu, Yi-Keng ; Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan ; Jiang, Ren-Hao ; Lu, Yu-Hsuan ; Chen, Bo-Chun
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The letter reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barrier (QB). The indium mole fraction of AlInGaN QB could be enhanced as we increased the trimethylgallium flow rate. It was found the AlInGaN/InGaN LEDs can reduce forward voltage and improve light output power, compared with conventional GaN QB. By using advanced device simulation, it should be attributed to a reduction in lattice mismatch induced polarization mismatch in the active layer, which results in the suppression of electron overflow.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 12 )