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Nanosecond pulsed field emission from single-gate metallic field emitter arrays fabricated by molding

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8 Author(s)
Tsujino, S. ; Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland ; Paraliev, M. ; Kirk, E. ; Vogel, T.
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Electrically gated pulsed field emission from molybdenum field emitter arrays was studied. Single-gate field emitter array devices supported by metallic substrates were fabricated by a combination of molding and a self-aligned gate process. Devices were tested in a low-inductance cathode holder compatible with the high-acceleration electric field of a pulsed diode gun. Pulsed field emission down to 1.1 ns was observed for single-gate devices with 1.2×103–1.2×105 emitter tips with 5 μm array pitches. Integrating the field emitter arrays in a high-voltage pulsed diode gun, the authors demonstrated nanosecond field emission at an acceleration field of 30 MV/m at the cathode surface and acceleration of the field emission electron beam up to 300 keV. In addition, transverse beam emittance of the single-gate devices was measured with two different array sizes.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:29 ,  Issue: 2 )