By Topic

Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Changhwan Choi ; Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-Dong, Seongdong-Gu, Seoul 133-791, Republic of Korea ; Kam-Leung Lee ; Narayanan, V.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3570655 

The impact of diffusionless anneal using dynamic surface anneal (DSA) on the electrical properties of p-type metal-oxide-semiconductor devices with high-k gate dielectrics and metal gate was investigated by monitoring flatband voltage (VFB) and equivalent oxide thickness (EOT) change. Compared to rapid thermal anneal, DSA induces a positive VFB shift without EOT degradation. This finding is attributed to suppression of positively charged oxygen vacancies [Vo++] generation in high-k dielectrics due to the shorter thermal budget. Processing parameters including high-k dielectrics, TiN metal gate thickness, and Si cap deposition temperature significantly affect thermally induced-oxygen vacancies, leading to different VFB behaviors.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 12 )