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Strain engineering such as tensile-strained silicon on silicon germanium is widely used in complementary metal-oxide-semiconductor (MOS) devices to enhance carrier mobility and can potentially reduce the specific on-resistance of trench power MOS field-effect transistors (MOSFETs). We report on the numerical study of a new trench power MOSFET structure with a strained p-type Si/SiGe superlatticelike channel region and of a process of fabricating the device. The stress distribution and the mobility enhancement inside the MOSFET structure are investigated. The breakdown voltage, the specific on-resistance, and the gate charge of the SiGe power MOSFET are evaluated. The new SiGe-channel power MOSFET exhibits a 12% reduction in the on -resistance while maintaining essentially the same blocking voltage and gate charge as the silicon trench power MOSFET.