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Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

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5 Author(s)
Adamopoulos, George ; Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2BW, United Kingdom ; Thomas, Stuart ; Bradley, Donal D.C. ; McLachlan, Martyn A.
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We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm2/Vs and current on/off ratio on the order of 105. This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.

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Applied Physics Letters  (Volume:98 ,  Issue: 12 )