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A Compact, Low-Power 40-GBit/s Modulator Driver With 6-V Differential Output Swing in 0.25- \mu m SiGe BiCMOS

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3 Author(s)
Knochenhauer, C. ; Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany ; Scheytt, J.C. ; Ellinger, F.

This paper presents a high-speed, low-power modulator driver featuring a novel modified breakdown voltage doubler (BVD) topology. Further speed enhancement and reduction of power consumption is achieved by multiple frequency compensation methods. An optimization method combining small and large-signal analyses is presented. The driver was fabricated in a 0.25-μm SiGe BiCMOS technology with fT of up to 180 GHz. It features 13-dB differential gain, a small-signal bandwidth of 33.7 GHz and delivers a single-ended output swing of 3 Vpp (6 Vpp differential) at 40 GBit/s into a 50-Ω load consuming only 1.35 W of DC power.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:46 ,  Issue: 5 )

Date of Publication:

May 2011

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