By Topic

Impact of Edge Encroachment on Programming and Erasing Gate Current in nand -Type Flash Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Ji-Ting Liang ; Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Chun-Hsing Shih ; Wei Chang ; Yan-Xiang Luo
more authors

The edge encroachment of tunnel oxide is experimentally found to degrade the Fowler-Nordheim (FN) tunneling gate current of NAND-type Flash cells. This work elucidates the impact of edge encroachment on FN tunneling current for use in programming and erasing operations. The fringing field effect and tunnel oxide with trapezoidal edge are considered in the determination of physical gate current in which a conformal-mapping method is used to estimate the contribution of the fringing fields. These analytical results are confirmed using 2-D device simulations and experimental measurements. The results show that the overlapped encroachment causes an exponential degradation of intrinsic FN tunneling current. Preventing the encroachment of lateral edges resulting from overall tunnel-oxide enlargement is critical to ensuring normal programming and erasing speeds in future NAND-type Flash cells.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 4 )