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In this paper, a new monolithic bidirectional bipolar junction transistor with full turn-off control is studied due to technology computer-aided tools. The structure is built on a symmetrical transistor using silicon-on-insulator technology, which functionality relies on reduced surface field and base shielding effects. These concepts allow high drift doping concentrations and a thin and/or lowly doped base. Such a structure is suitable for bidirectional household appliances within a confined environment where power dissipation is a critical parameter.
Date of Publication: April 2011