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Ferromagnetic resonance (FMR) study of the magnetic anisotropy in epitaxial (Ga,Mn)As grown on vicinal GaAs is presented. The data collected in the growth plane reveal very limited dependence on the miscut angle η, with a negligible effect of η on the in-plane uniaxial anisotropy. In the out-of-plane configuration, the substrate misorientation has a pronounced influence on FMR, which features are partially explained with a phenomenological treatment of the atomic step-induced anisotropy. This simple model, however, does not account for the miscut-induced dependence of FMR on the orientation of microwave magnetic field, that is observed with the static field applied invariably along the growth direction.