Referenced Items are not available for this document.
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3535426
Ferromagnetic resonance (FMR) study of the magnetic anisotropy in epitaxial (Ga,Mn)As grown on vicinal GaAs is presented. The data collected in the growth plane reveal very limited dependence on the miscut angle η, with a negligible effect of η on the in-plane uniaxial anisotropy. In the out-of-plane configuration, the substrate misorientation has a pronounced influence on FMR, which features are partially explained with a phenomenological treatment of the atomic step-induced anisotropy. This simple model, however, does not account for the miscut-induced dependence of FMR on the orientation of microwave magnetic field, that is observed with the static field applied invariably along the growth direction.
Published in:
Journal of Applied Physics
(Volume:109
,
Issue:
7
)
Date of Publication: Apr 2011
- Page(s):
- 07C301 - 07C301-3
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.3535426
- Date of Current Version :
- 22 March 2011
- Issue Date :
- Apr 2011
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
