Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions

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We present in-plane CoFeB–MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities ∼4 MA/cm² are obtained at 10 ns write times.

Published in:
Applied Physics Letters (Volume:98 , Issue: 11 )

Date of Publication: Mar 2011

Page(s):: 112507 - 112507-3
ISSN :: 0003-6951
Digital Object Identifier :: 10.1063/1.3567780
Product Type:: Journals & Magazines

Date of Current Version :: 22 March 2011
Issue Date :: Mar 2011

Author(s)

Amiri, P.K.
Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
Zeng, Z.M. ; Langer, J. ; Zhao, H. ; Rowlands, G. ; Chen, Y.-J. ; Krivorotov, I.N. ; Wang, J. ; Jiang, H.W. ; Katine, J.A. ; Huai, Y. ; Galatsis, K. ; Wang, K.L.