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Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides

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5 Author(s)
Kim, Hyunsoo ; School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea ; Kim, Kyoung-Kook ; Lee, Sung-Nam ; Ryou, Jae-Hyun
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We report on low-resistance Ti (50 nm)/Au (80 nm) contacts to amorphous gallium indium zinc oxides (a-GIZO). The specific contact resistances obtained using the transmission line method were as low as 2.85×10-5 Ω cm2 when annealed at 500 °C for 1 min in N2 ambient. This could be attributed to the combined effects of structural relaxation of a-GIZO films at elevated temperatures, causing drastic increases in both electron concentration and Hall mobility, and to interfacial reactions between Ti/Au and a-GIZO layers producing oxygen vacancies near the surface.

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Applied Physics Letters  (Volume:98 ,  Issue: 11 )