Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

We report on a growth of nearly lattice-matched InAlN/GaN heterostructures on 4H–SiC substrates by pulsed metal organic chemical vapor deposition, and an excellent device characteristic of high electron mobility transistors (HEMTs) fabricated on these InAlN/GaN heterostructures. The electron mobility is 1032 cm²/V s together with a high two-dimensional-electron-gas density of 1.59×10¹³ cm^-2 for the In_0.17Al_0.83N/AlN heterostructures. HEMTs with gate dimensions of 0.5×50 μm² and 3 μm source-drain distance exhibits a maximum drain current of 1 A/mm, a maximum extrinsic transconductance of 310 mS/mm, and current gain and maximum oscillation cutoff frequencies of 18 GHz and 39 GHz, respectively.