Referenced Items are not available for this document.
Reported for the first time is a full GaAs-based room-temperature near infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6 μm were up-converted to 0.87 μm.
Published in:
Electronics Letters
(Volume:47
,
Issue:
6
)
Date of Publication: March 17 2011
- Page(s):
- 393 - 395
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 11862751
- Digital Object Identifier :
- 10.1049/el.2010.3543
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 March 2011
- Issue Date :
- March 17 2011
- Sponsored by :
- Institution of Engineering and Technology
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