System Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
En-Xiao Liu ; Electron. & Photonics Dept., A*STAR, Singapore, Singapore ; Er-Ping Li ; Wei-Bin Ewe ; Hui Min Lee
more authors

This paper presents a compact wideband equivalent circuit model for electrical modeling of through-silicon vias (TSVs) in 3-D stacked integrated circuits and packaging. Rigorous closed form formulas for the resistance and inductance of TSVs are de rived from the magneto-quasi-static theory with a Fourier-Bessel expansion approach, whereas analytical formulas from static solutions are used to compute the capacitance and conductance. The equivalent-circuit model can capture the important parasitic effects of TSVs, including the skin effect, proximity effect, lossy effect of silicon, and semiconductor effect. Therefore, it yields accurate results comparable to those with 3-D full-wave solvers.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:59 ,  Issue: 6 )