By Topic

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in \hbox {TiO}_{2} -Based Unipolar Resistive Memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Liang Zhao ; Tsinghua University, Beijing, China ; Jinyu Zhang ; Yu He ; Ximeng Guan
more authors

In this letter, atomistic-level models and simulations of unipolar TiO2 RRAM are addressed. A dynamic model of SET/RESET is developed based on recent experimental findings, which attributes SET to oxygen vacancy (VO) drift and Ti4O7 conductive filament (CF) growth, while RESET is explained by the melting of Ti4O7 CF and subsequent (VO) diffusion and recombination. Based on the model, electro-thermal and molecular dynamics simulations are carried out to reproduce the complete switching cycle at an atomistic level.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 5 )