Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in $\hbox{TiO}_{2}$-Based Unipolar Resistive Memory

In this letter, atomistic-level models and simulations of unipolar TiO
₂
RRAM are addressed. A dynamic model of SET/RESET is developed based on recent experimental findings, which attributes SET to oxygen vacancy (V
_O
) drift and Ti
₄
O
₇
conductive filament (CF) growth, while RESET is explained by the melting of Ti
₄
O
₇
CF and subsequent (V
_O
) diffusion and recombination. Based on the model, electro-thermal and molecular dynamics simulations are carried out to reproduce the complete switching cycle at an atomistic level.