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Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in \hbox {TiO}_{2} -Based Unipolar Resistive Memory

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6 Author(s)
Liang Zhao ; Tsinghua Univ., Beijing, China ; Jinyu Zhang ; Yu He ; Guan, Ximeng
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In this letter, atomistic-level models and simulations of unipolar TiO2 RRAM are addressed. A dynamic model of SET/RESET is developed based on recent experimental findings, which attributes SET to oxygen vacancy (VO) drift and Ti4O7 conductive filament (CF) growth, while RESET is explained by the melting of Ti4O7 CF and subsequent (VO) diffusion and recombination. Based on the model, electro-thermal and molecular dynamics simulations are carried out to reproduce the complete switching cycle at an atomistic level.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )