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Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High- k Dielectric/Metal Gate

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12 Author(s)
Hyuk-Min Kwon ; Department of Electronics Engineering, Chungnam National University, Daejeon , Korea ; In-Shik Han ; Jung-Deuk Bok ; Sang-Uk Park
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The behavior of ID random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO2/TaN is experimentally investigated and discussed. The ID-RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The observed ratio of ID-RTS noise on a wafer is quite similar to that of a p-MOSFET with the conventional plasma-SiON dielectric, which means that the noise distribution on a wafer level is independent of the gate oxide structure and/or material. However, the relative magnitude of change of the drain current to the applied current (ΔID/ID) of the p-MOSFETs with high-k (HK) dielectrics is greater than that of p-MOSFETs with conventional plasma-SiON dielectrics by about six times due to the greater number of preexisting bulk traps in the HK dielectric. Therefore, ID-RTS noise and its associated 1/f noise can present a serious issue to the CMOSFET with an advanced HK dielectric for low-power analog and mixed-signal applications.

Published in:

IEEE Electron Device Letters  (Volume:32 ,  Issue: 5 )