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AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

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3 Author(s)
Hyung-Seok Lee ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Dong Seup Lee ; Palacios, Tomas

This letter reports undoped AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with a Si-CMOS-compatible technology based on Ti/Al/W ohmic and Schottky contacts. The use of ohmic recess is key to reduce the contact resistance of this Au-free metallization below 0.5 Ω·mm. Comparison of HEMTs fabricated on the same wafer with and without ohmic recess shows that the recess provides a tenfold reduction in contact resistance, resulting in a fivefold lower forward voltage drop at IDS = 100 mA/mm. The reported Au-free AlGaN/GaN HEMT fabrication technology provides similar performance (i.e., contact resistance, leakage current, and breakdown voltage) than state-of-the-art Au-based AlGaN/GaN HEMTs and can be used in standard Si fabs without the risk of contamination.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )