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Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

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5 Author(s)
SungGeun Kim ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Luisier, M. ; Paul, A. ; Boykin, T.B.
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The influence of interface roughness scattering (IRS) on the performances of silicon nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum transport simulator based on an atomistic sp3d5s* tight-binding model. An interface between silicon and silicon dioxide layers is generated in a real-space atomistic representation using an experimentally derived autocovariance function. An oxide layer is modeled in a virtual crystal approximation using fictitious SiO2 atoms. 〈110〉-oriented NWs with different diameters and randomly generated surface configurations are studied. An experimentally observed on-current and threshold voltage are quantitatively captured by the simulation model. The mobility reduction due to IRS is studied through a qualitative comparison of the simulation results with the experimental data.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 5 )

Date of Publication:

May 2011

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