By Topic

Wafer-level integration of NiTi shape memory alloy wires for the fabrication of microactuators using standard wire bonding technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Fischer, A.C. ; KTH - R. Inst. of Technol., Stockholm, Sweden ; Gradin, H. ; Braun, S. ; Schroder, S.
more authors

This paper reports on the first integration of SMA wires into silicon based MEMS structures using a standard wire bonder. This approach allows fast and efficient placement, alignment and mechanical attachment of NiTi-based SMA wires to silicon-based MEMS. The wires are mechanically anchored and clamped into deep-etched silicon structures on a wafer. The placement precision is high with an average deviation of 4 μm and the mechanical clamping is strong, allowing successful actuation of the SMA wires.

Published in:

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Date of Conference:

23-27 Jan. 2011