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This paper describes the existence of piezoelectric boundary acoustic wave (PBAW) propagating in a Cu electrode/Y-cut X-propagating (YX) LiNbO3 substrate structure partially covered with a SiO2 layer. In the analysis, two types of structures are taken into consideration: one is the so-called slotted structure with SiO2 pillars placed in the grating slots; the other is the so-called topped structure with SiO2 pillars placed on the top of grating electrodes. The top surface could be fully covered with an additional layer (like epoxy) to bridge the grating slots for encapsulation. Results show that SH-type PBAW begins to propagate in the slotted structure when the SiO2 thickness exceeds 0.3 wavelength. Strong electromechanical coupling factor K2 of 21%, and temperature coefficient of velocity (TCV) of -33 ppm/°C are obtained. In the topped structure, on the other hand, the boundary acoustic wave mode is not supported. Instead, the thickness resonance modes in the SiO2 pillar do exist. Comparison of the obtained results with those in the structure fully covered with the SiO2 layer indicates that, as for the PBAW mode, the slotted structure offers improved K2 but with worse TCV compared with the fully covered SiO2 structure.