By Topic

Effect of Scaling \hbox {WO}_{x} -Based RRAMs on Their Resistive Switching Characteristics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Seonghyun Kim ; Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea ; Biju, K.P. ; Minseok Jo ; Seungjae Jung
more authors

We investigated the effect of scaling down the device area of WOx resistive random-access memory (RRAM) devices on their switching characteristics. Device dimensions were successfully scaled down to 50 nm using a via-hole structure with additional Al2O3 sidewall process. As compared to the microscale devices, the nanoscale devices exhibited a distinct switching mechanism and better memory performance, such as improved switching uniformity, larger memory window, and stable endurance characteristics for up to 107 cycles. This improvement can be explained by a uniform interfacial switching mechanism in nanoscale device; this is in contrast with the defect-induced filamentary switching mechanism observed in microscale devices. In this way, the intrinsic switching properties of RRAMs were obtained by scaling down of the device area, indicating that RRAMs hold considerable promise for future applications.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )