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Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy

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8 Author(s)
Jianke Yao ; State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies, Sun Yat-Sen University, Guangzhou, China ; Ningsheng Xu ; Shaozhi Deng ; Jun Chen
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The electrical and photosensitive characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) related to the oxygen vacancies V̈O are discussed. With the filling of V̈O of ratio from 14 to 8, the electron density of the a-IGZO channel decreases from 7.5 to 3.8 ( ×1016 cm-3); the saturation mobility of the TFT decreases from 3.1 to 1.4 cm-2/(V · s); the threshold voltage increases from 7 to 11 V for the TFT with a lower on-current; and the subthreshold slope increases from 2.4 to 4.4 V/dec for the TFT with a higher interface defect density of 4.9 × 1011 cm-2, the worst electrical stability of Vth ~ 10 V, and a hysteresis-voltage decrease from 3.5 to 2 V. The photoreaction properties of a-IGZO TFTs are also sensitive to the oxygen-content-related absorption of the a-IGZO channel. With the lowest content of oxygen in the channel, the TFT has the largest photocurrent gain of 50 μA (Vg = 30 V; Vd = 10 V) and decrease in Vth ( Vth V) at a high light intensity. The light-induced change of TFT characteristics is totally reversible with the time constant for recovery of about 2.5 h.

Published in:

IEEE Transactions on Electron Devices  (Volume:58 ,  Issue: 4 )