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Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn)3O4 oxide semiconductor and their electrical transport properties

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4 Author(s)
Takaobushi, Junichi ; The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan ; Kanki, Teruo ; Kawai, T. ; Tanaka, Hidekazu

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We have constructed a field effect transistor structure composed of the sustainable oxide semiconductor (Fe,Zn)3O4 with high Curie temperature and ferroelectric Pb(Zr,Ti)O3. Electric field control of (Fe2.5Zn0.5)O4 channel resistance was achieved in the heterostructures though modulation of their carrier concentration. The results will lead to the significant development of sustainable oxide semiconductor spintronics devices working at room temperature.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 10 )