By Topic

Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn)3O4 oxide semiconductor and their electrical transport properties

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Takaobushi, Junichi ; The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan ; Kanki, Teruo ; Kawai, T. ; Tanaka, Hidekazu

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3564885 

We have constructed a field effect transistor structure composed of the sustainable oxide semiconductor (Fe,Zn)3O4 with high Curie temperature and ferroelectric Pb(Zr,Ti)O3. Electric field control of (Fe2.5Zn0.5)O4 channel resistance was achieved in the heterostructures though modulation of their carrier concentration. The results will lead to the significant development of sustainable oxide semiconductor spintronics devices working at room temperature.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 10 )