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Thin-film transistors based on poly(3,3-dialkyl-quarterthiophene) and zinc oxide nanowires with improved ambient stability

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6 Author(s)
Vieira, Sara M.C. ; INESC MN & IN, Rua Alves Redol 9, 1000-029 Lisboa, Portugal ; Hsieh, G.-W. ; Unalan, Husnu E. ; Dag, Sefa
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The ambient stability of thin-film transistors (TFTs) based on zinc oxide (ZnO) nanowires embedded in poly(3,3-dialkyl-quarterthiophene) was monitored through time dependence of electrical characteristics over a period of 16 months. The hybrid-based TFT showed an initial hole mobility in the linear regime of 4.2×10-4 cm2/Vs. After 16 months storage in ambient conditions (exposed to air, moisture, and light) the mobility decreased to 2.3×10-5 cm2/Vs. Comparatively the organic-based TFT lost total carrier mobility after one month storage making the hybrid-based TFTs more suitable for transistor applications when improved stability combined with structural flexibility are required.

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Applied Physics Letters  (Volume:98 ,  Issue: 10 )