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Carry Chains for Ultra High-Speed SiGe HBT Adders

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7 Author(s)
Gutin, A. ; Rensselaer Polytech. Inst., Troy, NY, USA ; Jacob, P. ; Chu, M. ; Belemjian, P.M.
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Adder structures utilizing SiGe Hetero-junction Bipolar Transistor (HBT) digital circuits are examined for use in high clock rate digital applications requiring high-speed integer arithmetic. A 4-gate deep test structure for 32-bit addition using a 210 GHz fT process has been experimentally verified to operate with 37.5 ps delay or 26.7 GHz speed. The paper documents a unique blend of CML and ECL circuit innovations, which is needed to obtain this result. The chip is estimated to have a power-delay product of 109 ps-W at a device temperature of 85°C . A low power design is shown to have a power-delay product of 48 ps-W at 21.7 GHz. Speed-power trade-offs are explored through pure ECL logic and varying current. Additionally, with next generation SiGe HBTs, this work shows that 40 GHz is achievable at slightly above room temperature.

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Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:58 ,  Issue: 9 )