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A New Differential P-Channel Logic-Compatible Multiple-Time Programmable (MTP) Memory Cell With Self-Recovery Operation

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7 Author(s)
Te-Liang Lee ; Inst. of Electron. Eng., Nat. Tsing-Hua Univ., Hsinchu, Taiwan ; Yi-Hung Tsai ; Wun-Jie Lin ; Hsiao-Lan Yang
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This letter presents a novel differential p-channel logic-compatible multiple-time programmable (MTP) memory cell. This MTP cell has a pair of floating gates, and performs differential read to increase the on/off window. Additionally, a novel self-recovery operation is implemented to boost the floating gate level, thus avoiding the charge-loss problem due to the thin gate oxide requirement in advance logic nonvolatile memory applications. This differential cell with its self-recovery operation is a very promising MTP solution for gate oxide layer with a 70 Å thickness, and can be implemented by 3.3 V I/O in 90 nm and the advanced CMOS logic processes such as 45 nm and beyond.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 5 )