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Bias Switchable Dual-Band InAs/GaSb Superlattice Detector With pBp Architecture

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5 Author(s)
Plis, E.A. ; Lobo Venture Lab. 801, SK Infrared, LLC, Albuquerque, NM, USA ; Krishna, S.S. ; Gautam, N. ; Myers, S.
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We report on a dual-band [mid/long-wave infrared (MWIR and LWIR)] InAs/GaSb strained layer superlattice detector with a pBp architecture. Fifty percent cutoff wavelengths of 5 and 9 μm were obtained with diffusion-limited behavior for midwave IR absorber. At 77 K, the peak D* values were equal to 5 × 1011 Jones (Vb = +0.1 V, λ = 5 μm) and 2.6 × 1010 Jones (Vb = -0.4 V, λ = 9 μm). The corresponding values of responsivity and quantum efficiency were 1.6 A/W and 39% (MWIR) and 1.3 A/W and 17% (LWIR).

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Photonics Journal, IEEE  (Volume:3 ,  Issue: 2 )