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A high dynamic range wide-band switched gain controlled LNA in 0.18 µm CMOS

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2 Author(s)
Bonghyuk Park ; ETRI, Daejeon, South Korea ; Jaeho Jung

A high dynamic range, wide-band switched gain LNA has been developed by using CMOS 0.18-μm technology. The proposed low noise amplifier (LNA) consists of cascode feedback in the first stage and cascode topology in the second stage. The frequency response of 2.0 - 3.5 GHz is demonstrated in this work. In high gain mode, measured results show a noise figure of 2.6 - 2.96 dB, gain of 23.8 - 26.2 dB, and input P1dB of -18.0 dBm with 10.6 mA DC current. In mid gain mode, the LNA achieves 4.27 - 6.57 dB noise figure and 20.2 - 21.5 dB gain with 11.0 mA current consumption. In low gain mode, 6.7 - 8.58 dB noise figure, 10.2 - 12.5 dB gain, and -10 dBm input P1dB with 11.0 mA current are realized. The switched feedback resistor affects to make a high dynamic range.

Published in:

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Date of Conference:

7-10 Dec. 2010

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