By Topic

Minimization of baseband electrical memory effects in GaN HEMTs using active IF load-pull

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Akmal, M. ; Cardiff Sch. of Eng., Cardiff Univ., Cardiff, UK ; Lees, J. ; Carrubba, V. ; Bensmida, S.
more authors

This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics extracted from measured input voltage and output current envelopes of a power device. Investigations have been carried out using a commercially available 10W GaN HEMT device characterised at 2GHz within a high-power modulated wave for measurement system. Active IF loadpull has been employed to present specific baseband impedance environments, allowing the sensitivity of IMD symmetry to baseband impedance variations to be investigated.

Published in:

Microwave Conference Proceedings (APMC), 2010 Asia-Pacific

Date of Conference:

7-10 Dec. 2010