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A balanced frequency doubler has been demonstrated in 0.25-μm SOI SiGe BiCMOS technology operating from 22GHz to 29GHz with high fundamental frequency suppression and high conversion gain. A LC resonator circuit is designed to improve the suppression and conversion gain. The measured fundamental frequency suppression of greater than 45dBc is achieved at an input power of -9dBm in the 22-29GHz. Moreover, measured maximum conversion gain of 12.6dB is obtained at an input power of -19dBm. The frequency doubler works on 3.3V and doubler core only consumes 7.9mW DC power.