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A Whole-Chip ESD-Protected 0.14-pJ/p-mV 3.1–10.6-GHz Impulse-Radio UWB Transmitter in 0.18- 
CMOS
A Whole-Chip ESD-Protected 0.14-pJ/p-mV 3.1–10.6-GHz Impulse-Radio UWB Transmitter in 0.18-
This paper presents the design of a low-power single-full-band (3.1-10.6 GHz) noncarrier impulse-radio ultra-wideband (UWB) transmitter (TX) implemented in a commercial 0.18-μm CMOS technology. This UWB TX features fifth-order Gaussian derivative pulse shaping, integrated binary phase-shift keying modulation and 2.5-kV whole-chip electrostatic discharge (ESD) protection. Measurement shows full function with a very small die size of 0.25 mm2, extremely low power consumption of 0.14 pJ/p-mV, and an ultrashort pulsewidth of 394 ps. This ESD-protected UWB TX has the potential to support wireless streaming for gigabit/second applications.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:59
,
Issue:
4
)
Date of Publication: April 2011
- Page(s):
- 1109 - 1116
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 11911214
- Digital Object Identifier :
- 10.1109/TMTT.2011.2114170
- Product Type:
- Journals & Magazines
- Date of Publication :
- 10 March 2011
- Date of Current Version :
- 07 April 2011
- Issue Date :
- April 2011
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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