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A 1.5 V circuit technology for 64 Mb DRAMs

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14 Author(s)

A low-voltage circuit technology for 1.5-V, 64-Mb DRAMs designed to achieve a reasonable speed performance projected from existing trends is described. The DRAM has been deigned using novel low-voltage circuits. An RAS access time of 50 ns has been obtained with power dissipation as low as 44 mW. These results show that a low-voltage battery-operated DRAM is a promising target for the future

Published in:

VLSI Circuits, 1990. Digest of Technical Papers., 1990 Symposium on

Date of Conference:

7-9 June 1990

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