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Static and dynamic models for the superconducting transistor are developed. The models capture the symmetry of the source-drain structure, incorporate the gate reaction, span the long- and short-channel regimes without discontinuity, and are suitable for circuit simulation. The sensitivity of the drain-to-source critical current to changes in gate charge is shown to control much of the device dynamics. The model is used to investigate several circuit configurations including amplifiers, inverters, latches, flux transfer devices, and phase-locked components.
Date of Publication: Oct 1989