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GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology

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10 Author(s)
Delaney, M.J. ; Chou, C.S. ; Larson, L.E. ; Jensen, J.F.
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High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a transconductance gm of 600 mS/mm and an extrapolated cutoff frequency fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz

Published in:
Custom Integrated Circuits Conference, 1989., Proceedings of the IEEE 1989

Date of Conference: 15-18 May 1989

Page(s):
18.3/1 - 18.3/4
INSPEC Accession Number:
3484050
Conference Location :
San Diego, CA, USA
Digital Object Identifier :
10.1109/CICC.1989.56782
Product Type:
Conference Publications

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