Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3553441
We demonstrate the absorption characteristics of silicon microring resonators at terahertz frequencies. Simulation and experimental data show a dipolar localized surface plasmon resonance (DLSPR) absorption peak. We demonstrate that the frequency position and magnitude of the DLSPR peak may be tuned by varying the geometry and thickness of the microring or by modification of the silicon impurity concentration. Finite difference time domain simulations reveal that there is a strong enhancement of the electric field at the resonant frequency. The absorption properties of our resonator are described in terms of effective optical constants and reveal that the silicon microring is an electric resonator. Surface plasmon resonators are efficient terahertz absorbers and have potential applications in security imaging, biological analysis, spectroscopy and nondestructive testing.