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The effect of the electrostatic Coulomb interaction on the line shape related to the intensity-dependent intersubband optical processes in a Si δ-doped quantum well is studied using the density matrix formalism. The electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schrödinger–Poisson equations. The line shape function is considerably modified by the optical intensity and the electric and magnetic fields. Moreover, we demonstrate the existence of the optical bistability for appropriate values of the optical intensity and also the control of the optical bistability with the electric and magnetic fields. It is also found that the intersubband relaxation time plays an important role in determining the optical bistability region.